发明名称 PLASMA ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma etching method for forming an inclined structure to a machined plate which is a key point in manufacturing a micromachine, in a short time at a low cost with fewer processes. SOLUTION: In plasma etching, a potential gradient on a substrate is vertical to the substrate. When the machined plate 3 with a narrow width is placed at a certain angle on the substrate 1, the potential gradient influenced by both the substrate to be a base, and the machined plate placed on the substrate is generated. Since ion is incident to the machined plate along the electric field gradient, etching progresses in an inclined direction to the machined plate. Using this, an inclined structure 7 is obtained. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006000945(A) 申请公布日期 2006.01.05
申请号 JP20040177415 申请日期 2004.06.15
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 ANDO YASUHISA;IKEHARA TAKESHI;MAEDA RYUTARO;MATSUMOTO SOHEI;SHIRAISHI NAOKI
分类号 B81C99/00;H01L21/3065 主分类号 B81C99/00
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