发明名称 Wet abatemenbt system for waste SiH4
摘要 A new method of silane abatement is achieved. The novel silane abatement system comprises a water-filled chamber within an outer chamber. An air intake is located in one upper portion of said outer chamber and an exhaust output is located in another upper portion of the outer chamber. A silane gas intake pipe runs into the outer chamber and has its output under water in the water-filled chamber. A drain is connected through a valve at a bottom portion of the water-filled chamber. Many safety features are built into the wet abatement system, including temperature and water level sensors, water sprinklers, and means for shutting off air supply, exhaust, and silane intake. Waste silane gas is bubbled into a water-filled chamber. The waste silane gas is reacted with oxygen in water in the water-filled chamber whereby SiO<SUB>2 </SUB>precipitates are formed and wherein the SiO<SUB>2 </SUB>precipitates settle to a bottom surface of the water-filled chamber. The SiO<SUB>2 </SUB>precipitates are drained out of the water-filled chamber to complete the abatement process.
申请公布号 US2006002830(A1) 申请公布日期 2006.01.05
申请号 US20050217780 申请日期 2005.09.01
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 TONG LEE K.;CHEE CHONG P.
分类号 B01D50/00;B01D53/46;B01D53/78 主分类号 B01D50/00
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