Method of forming capacitor of semiconductor device

摘要

Disclosed is a method of forming a capacitor of a semiconductor device which can secure a desired leakage current characteristic while securing a desired charging capacitance. The inventive method of forming a capacitor of a semiconductor device comprises steps of: forming a bottom electrode on a semiconductor substrate with a storage node contact so that the bottom electrode is connected with the storage node contact; plasma-nitrifying the bottom electrode to form a first nitrification film on the surface of the bottom electrode; forming a La₂O₃ dielectric film on the bottom electrode including the first nitrification film; plasma-nitrifying the La₂O₃ dielectric film to form a second nitrification film on the surface of the La₂O₃ dielectric film; and forming a top electrode on the La₂O₃ dielectric film including the second nitrification film.