发明名称 SEMICONDUCTOR FILM MANUFACTURING METHOD AND SUBSTRATE MANUFACTURING METHOD
摘要 <p>This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming step of hetero-epitaxially growing a separation layer (2) on a seed substrate (1), a semiconductor film forming step of forming a semiconductor film (3) on the separation layer (2), and a separation step of separating, by using the separation layer (2), the semiconductor film (3) from a composite member (1a) formed in the semiconductor film forming step.</p>
申请公布号 WO2006001285(A1) 申请公布日期 2006.01.05
申请号 WO2005JP11388 申请日期 2005.06.15
申请人 CANON KABUSHIKI KAISHA;SEKIGUCHI, YOSHINOBU;YONEHARA, TAKAO;KOTO, MAKOTO;OKUDA, MASAHIRO;SHIMADA, TETSUYA 发明人 SEKIGUCHI, YOSHINOBU;YONEHARA, TAKAO;KOTO, MAKOTO;OKUDA, MASAHIRO;SHIMADA, TETSUYA
分类号 H01L33/32;(IPC1-7):H01L21/02;H01L33/00;H01S5/323;H01L21/20;H01L27/12 主分类号 H01L33/32
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