METHOD OF PROGRAMMING, PHASE CHANGE MEMORY DEVICE, AND DRIVING CIRCUIT OF PHASE CHANGE MEMORY WRITE OPERATION

摘要

PROBLEM TO BE SOLVED: To provide a phase change memory device driving circuit utilizing measurement for controlling current and a method for adjusting the driving current of the phase change memory device utilizing measurement.

SOLUTION: This method for programming the phase change memory device comprises a process of measuring the resistance value of a phase change substance during programming of the phase change memory device and adjusting the current to be supplied to the phase change substance in the phase change memory device in response to the measured resistance value. Thus, it is possible to perform following adjustment in response to detected voltage or current. The current to be applied to the phase change substance is increased until the level of the detected voltage is varied with respect to a reference voltage value, and the current can be kept to be a certain value when the level of the detected voltage is varied with respect to the reference voltage value. The variation of the voltage detected with respect to the reference voltage value can be a case when the detected voltage level is lowered to be equal to or lower than the reference voltage value.

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