| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an imprinting method and an imprinting apparatus which have a productivity compatible with nano imprint lithography for forming a fine pattern of about a few to few dozens of nanometers of a semiconductor device. <P>SOLUTION: The entire part of a curved surface 135 within the predetermined angle range of a mold member 130 is formed is made to project outward around the central axis of the cylindrical shape of the surface wherein a concavo-convex pattern. The straight line of the curved surface 135 which is parallel to the central axis is rotated along the surface of a substrate while at the same time relatively moving the substrate 110 with respect to the mold member 130 along the substrate surface, to form a UV-hardening resin 120 between the mold member 130 and the substrate 110 into a desired shape. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
