| 摘要 |
PROBLEM TO BE SOLVED: To provide an ashing method capable of suppressing the occurrence of resist remainder after ashing. SOLUTION: In an ashing apparatus in which a chamber is commonly used for a reaction chamber and a vacuum discharge chamber, a semiconductor 112 is kept at a position spaced from a sample table 113 kept at a high temperature of 200°C or more until the reaction chamber becomes a vacuum state, the semiconductor substrate 112 is set on the sample table 113 to increase the temperature of it at a state in which the reaction chamber becomes the vacuum state and oxygen plasma ashing is performed, thereby preventing the resist remainder. COPYRIGHT: (C)2006,JPO&NCIPI
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