| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of suppressing the increase of a device area and easily obtaining a reference potential in a ferroelectric storage device for generating the reference potential by using a dummy cell. SOLUTION: The ferroelectric storage device includes a pair of first and second bit lines BL1A and BL1B, a sense amplifier SA1 provided between the first and second bit lines, switching elements SW1A and SW1B connected to the first and second bit lines, a plurality of memory cells MC connected to the first or second bit line, and reference cells DM1A and DM1B connected to a side closer to the sense amplifier than the switching element of the first bit line and a side closer to the sense amplifier than the switching element of the second bit line and used for generating reference potentials. When data is read from the memory cell of one bit line side, the switching element of one bit line side is made conductive while the switching element of the other bit line side is cut off. COPYRIGHT: (C)2006,JPO&NCIPI
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