发明名称 |
Removing a high-k gate dielectric |
摘要 |
A metal oxide layer on a substrate is converted at least partly to a metal layer. At least part of the metal layer is covered by an oxidation resistant cover. The covered layer and underlying metal may be removed, for example, using acid.
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申请公布号 |
US2006003499(A1) |
申请公布日期 |
2006.01.05 |
申请号 |
US20040882733 |
申请日期 |
2004.06.30 |
申请人 |
DOCZY MARK L;NORMAN ROBERT L;BRASK JUSTIN K;KAVALIEROS JACK;METZ MATTHEW;DATTA SUMAN;CHAU ROBERT S |
发明人 |
DOCZY MARK L.;NORMAN ROBERT L.;BRASK JUSTIN K.;KAVALIEROS JACK;METZ MATTHEW;DATTA SUMAN;CHAU ROBERT S. |
分类号 |
H01L21/335;H01L21/425;H01L21/44 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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