HYBRID EPITAXY SUPPORT AND METHOD FOR MAKING SAME

摘要

The invention concerns a method for making an epitaxy support, including forming, in a first monocrystalline conductive silicon carbide (SiC) or monocrystalline gallium nitride (GaN) substrate, an insulating monocrystalline silicon carbide or an insulating monocrystalline gallium nitride layer. The method further includes transferring said monocrystalline silicon carbide or gallium nitride layer onto a second substrate (4) made of polycrystalline ceramic material having a thermal conductivity not less than 1.5 W.cm^-1.K^-1. The method enables economical and efficient electronic components to be manufactured, in particular for power high frequency applications.