发明名称 EUV LIGHT SOURCE, EUV EXPOSURE EQUIPMENT AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>In a heated tank (4), a liquid having Sn solid fine particles dispersed in a resin is stored. The resin pressurized by a pressurizing pump is lead to a nozzle (1), and the resin in a liquid state is jetted from a leading edge of the nozzle (1) provided in a vacuum chamber (7). The liquid in a liquid state jetted from the nozzle (1) forms a spherical shape by surface tension, cooled in vacuum to be solidified, and becomes a solid target (2). The vacuum chamber (7) is provided with a laser introducing window (10) for introducing laser beams. The laser beams emitted from a laser light source (8) arranged outside the vacuum chamber (7) are collected by a lens (9), introduced into the vacuum chamber (7) to have the target in a plasma state, and EUV light is generated.</p>
申请公布号 WO2006001459(A1) 申请公布日期 2006.01.05
申请号 WO2005JP11865 申请日期 2005.06.22
申请人 NIKON CORPORATION;MURAKAMI, KATSUHIKO 发明人 MURAKAMI, KATSUHIKO
分类号 (IPC1-7):H01L21/027;G21K5/02;G03F7/20;G21K5/08;H05G2/00 主分类号 (IPC1-7):H01L21/027
代理机构 代理人
主权项
地址