| 摘要 |
<P>PROBLEM TO BE SOLVED: To turn a semiconductor layer into a thin film by injecting releasing materials into the semiconductor layer, and to prevent the releasing materials from having an adverse effect on a semiconductor device. <P>SOLUTION: The method of manufacturing a semiconductor device S comprises an insulating layer forming process of forming a gate oxide film 4 on the surface of a semiconductor layer 20 to serve as an insulating layer, a diffusion restraining layer forming process of injecting boron ions into the semiconductor layer 20 so as to restrain the above releasing materials from moving in the semiconductor layer 20 and to form a diffusion restraining layer 35 on the semiconductor layer 20, an activation process of activating boron contained in the diffusion restraining layer 35 by heating, a releasing layer forming process of forming a releasing layer 36 in the region of the semiconductor layer 20 opposite to the gate oxide film 4 through the intermediary of the diffusion restraining layer 35, a laminating process of laminating a glass substrate 18 on the semiconductor layer 20 on the side of the gate oxide film 4, and a dividing process of dividing the semiconductor layer 20 along the releasing layer 36 by subjecting the semiconductor layer 20 to a thermal treatment. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
