| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of manufacturing a semiconductor device capable of suppressing the dishing of a silicon layer by a simple method, and obtaining a stable flatness. SOLUTION: The method of manufacturing the semiconductor device comprises the steps of: (1) exposing the silicon layer by eliminating the upper portion of the protrusion of the silicon layer out of an insulating layer overlying the silicon layer having the protrusion; and (2) chemically and mechanically polishing the silicon layer exposed by slurry for polishing silicon while protecting the silicon layer by a remaining portion of the insulating layer. COPYRIGHT: (C)2006,JPO&NCIPI
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