| 发明名称 |
Void free, silicon filled trenches in semiconductors |
| 摘要 |
The present invention provides methods of producing substantially void-free trench structures. After deposition of an a-Si or polysilicon layer in a trench formed in a semiconductor, the a-Si or polysilicon is exposed to hydrogen at an elevated temperature.
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| 申请公布号 |
US2006003523(A1) |
申请公布日期 |
2006.01.05 |
| 申请号 |
US20040882752 |
申请日期 |
2004.07.01 |
| 申请人 |
HAUPT MORITZ |
发明人 |
HAUPT MORITZ |
| 分类号 |
H01L21/8242;H01L21/8234;H01L21/8244 |
主分类号 |
H01L21/8242 |
| 代理机构 |
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