| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high quality SiC single crystal which is almost free from micropipe defects, spiral dislocations, edge dislocations and stacking faults; and to provide a seed crystal. <P>SOLUTION: In a first growth process, a first growth crystal is produced by using a surface having an offset angle within ±20° from ä1-100} plane or a surface having an offset angle within ±20° from ä11-20} plane as a first growth surface, and in an intermediate growth process, an n-growth crystal is produced by using a surface inclined from the (n-1) growth surface at an angle of 45-90° and inclined from ä0001} plane at an angle of 60-90° as an n-growth surface. In the final growth process, a bulky SiC single crystal 30 wherein the spiral dislocations and the edge dislocations are reduced is grown on the final growth surface 35 by using a surface having an offset angle within ±20° from ä0001}plane of the (N-1) growth crystal as the final growth surface 35. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
