发明名称 |
Atomic layer deposited dielectric layers |
摘要 |
An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO<SUB>2</SUB>. Depositing a hafnium metal layer on a substrate surface by atomic layer deposition and depositing a hafnium oxide layer on the hafnium metal layer by atomic layer deposition form a hafnium oxide dielectric layer substantially free of silicon oxide. Dielectric layers containing atomic layer deposited hafnium oxide are thermodynamically stable such that the hafnium oxide will have minimal reactions with a silicon substrate or other structures during processing.
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申请公布号 |
US2006001151(A1) |
申请公布日期 |
2006.01.05 |
申请号 |
US20050213013 |
申请日期 |
2005.08.26 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L23/12;C23C16/40;H01L;H01L21/02;H01L21/205;H01L21/28;H01L21/31;H01L21/314;H01L21/316;H01L21/336;H01L21/8242;H01L21/8244;H01L23/053;H01L29/51;H01L29/78 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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