发明名称 |
AlN substrates and method for cleaning them |
摘要 |
<p>An Al x Ga y In 1-x-y N substrate in which particles having a grain size of at least 0.2 µm on a surface of the Al x Ga y In 1-x-y N substrate are at most 20 in number when a diameter of the Al x Ga y In 1-x-y N substrate is two inches, and a cleaning method with which the Al x Ga y In 1-x-y N substrate can be obtained are provided. Further, an Al x Ga y In 1-x-y N substrate (51) in which, in a photoelectron spectrum of a surface of the Al x Ga y In 1-x-y N substrate (51) by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C 1s electrons and a peak area of N 1s electrons (C 1s electron peak area / N 1s electron peak area) is at most 3, and a cleaning method with which the Al x Ga y In 1-x-y N substrate can be obtained are provided. Still further, an AlN substrate (52) in which, in a photoelectron spectrum of a surface of the AlN substrate (52) by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al 2s electrons and a peak area of N 1s electrons (Al 2s electron peak area / N 1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.</p> |
申请公布号 |
EP1612301(A2) |
申请公布日期 |
2006.01.04 |
申请号 |
EP20050013957 |
申请日期 |
2005.06.28 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
UEMURA, TOMOKI;ISHIBASHI, KEIJI;FUJIWARA, SHINSUKE;NAKAHATA, HIDEAKI |
分类号 |
C30B33/00;C30B29/40;H01L31/00 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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