| 发明名称 |
A process for controlling the proximity effect correction |
| 摘要 |
<p>A process for controlling the proximity effect correction in an electron beam lithography system. The exposure is controlled in order to obtain resulting pattern after processing which is conform to design data. In a first step an arbitrary set patterns is exposed without applying the process for controlling the pro</p> |
| 申请公布号 |
EP1612834(A1) |
申请公布日期 |
2006.01.04 |
| 申请号 |
EP20040103020 |
申请日期 |
2004.06.29 |
| 申请人 |
LEICA MICROSYSTEMS LITHOGRAPHY GMBH |
发明人 |
HUDEK, PETER;BEYER, DIRK |
| 分类号 |
H01J37/302;G03C5/00;G03F1/00;H01J37/317 |
主分类号 |
H01J37/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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