发明名称 |
Method for producing a single crystal of AlN. |
摘要 |
A method of producing a nitride single crystal includes the step of forming a material transport medium layer (12) containing a compound of rare earth element on a surface of a nitride crystal (11), and the step of making a seed crystal (13) in contact with the material transport medium layer (12) to grow a nitride single crystal (14) on the seed crystal (13). The material transport medium layer (12) contains the compound of rare earth element and at least one compound selected from a group of aluminum compound, alkaline earth compound and transition metal compound. With this producing method, a large nitride single crystal having a crystal size of at least 10 mm is obtained. |
申请公布号 |
EP1612300(A1) |
申请公布日期 |
2006.01.04 |
申请号 |
EP20040015358 |
申请日期 |
2004.06.30 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
UEMATSU, KOJI;NAKAHATA, SEIJI |
分类号 |
C30B29/40;C30B9/00;C30B29/38 |
主分类号 |
C30B29/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|