发明名称 |
Method and apparatus for photomask plasma etching |
摘要 |
A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber (102) having a substrate support pedestal (124) adapted to receive a photomask substrate thereon. An ion-radical shield (170) is disposed above the pedestal (124). A substrate (122) is placed upon the pedestal beneath the ion-radical shield (170). A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched predominantly with radicals that pass through the shield. |
申请公布号 |
EP1612840(A2) |
申请公布日期 |
2006.01.04 |
申请号 |
EP20050252818 |
申请日期 |
2005.05.09 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KUMAR, AJAY;CHANDRACHOOD, MADHAVI;ANDERSON, SCOTT ALAN;SATITPUNWAYCHA, PETER;YAU, WAI FAN |
分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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