发明名称 |
SEMICONDUCTOR LIGHT RECEIVING ELEMENT IN WHICH A SPACER LAYER FOR ACCELERATION IS INTERPOSED BETWEEN A PLURALITY OF LIGHT ABSORBING LAYERS AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor light receiving element has an n electrode, an n-type semiconductor doped layer or a non-doped layer provided above the n electrode, a semiconductor light absorbing layer provided above the n-type semiconductor doped layer or the non-doped layer, a p-type semiconductor doped layer provided above the semiconductor light absorbing layer, and a p electrode provided above the p-type semiconductor doped layer. The semiconductor light absorbing layer has at least two layer portions doped to p-type, and a spacer layer for acceleration which is formed from a semiconductor material sandwiched by the two layer portions and which makes electrons and positive holes generated by incident light being absorbed at the semiconductor light absorbing layer accelerate and run.
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申请公布号 |
CA2414293(C) |
申请公布日期 |
2006.01.03 |
申请号 |
CA20022414293 |
申请日期 |
2002.04.26 |
申请人 |
ANRITSU CORPORATION |
发明人 |
SASAKI, YUICHI;YOSHIDAYA, HIROAKI;HIRAOKA, JUN;KAWANO, KENJI |
分类号 |
H01L31/101;H01L31/18 |
主分类号 |
H01L31/101 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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