发明名称 |
Method and apparatus for building up large scale on chip de-coupling capacitor on standard CMOS/SOI technology |
摘要 |
The apparatus and method for forming de-coupling capacitors on top of SOC VLSI chip. The introduced large amount of de-coupling capacitor is intended to solve the power delivery problem of highly integrated and powered VLSI chip, especially in the Silicon-On-Insulator (SOI) technology. This invention proposes a design scheme which could utilize virtually unused area to build efficient de-coupling capacitors without introducing additional manufacture cost. This design scheme is especially effective when the VLSI technology is scaled down further.
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申请公布号 |
US6982197(B2) |
申请公布日期 |
2006.01.03 |
申请号 |
US20020067317 |
申请日期 |
2002.02.07 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
KU JOSEPH W.;VOORDE PAUL VANDE |
分类号 |
H01L21/8242;H01L21/20;H01L23/522;H01L27/08 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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