发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device includes a replica circuit including a plurality of replica cells (RMC) having the same elements as those of memory cells in a memory array and outputting signals with levels in the stage number to a common replica bit line, and a sense amplifier control circuit for receiving a signal of the replica bit line to control a timing of a signal SAE for starting a sense amplifier circuit. The replica circuit includes a switching circuit (SW) for switching the stage number of the replica cells to be activated among the plurality of replica cells in a programmable manner.
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申请公布号 |
US6982914(B2) |
申请公布日期 |
2006.01.03 |
申请号 |
US20040754747 |
申请日期 |
2004.01.08 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OHTSUKI HIROHISA;SUZUKI TOSHIKAZU |
分类号 |
G11C7/02;G11C11/419;G11C7/10;G11C7/22;G11C11/413;H01L21/8244;H01L27/11 |
主分类号 |
G11C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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