Semiconductor devices including a silicide layer

摘要

Embodiments of the present invention include a method for manufacturing a semiconductor device and a semiconductor device, in which, when a DRAM and a MOS field effect transistor that becomes a component of a logic circuit are mix-mounted on the same chip, the DRAM and the MOS field effect transistor can be provided with designed performances. After a capacitor 700 of the DRAM is formed, silicide layers 19 a and 19 b are formed over N⁺ type source/drain regions 41 c and 41 d of MOS field effect transistors 200 c, 200 d and 200 e that are located in peripheral circuit region 2000 and logic circuit region 3000.