Magnetoresistance effect device and magnetoresistance effect head comprising the same, and magnetic recording/reproducing apparatus

摘要

In the present invention, a thin film whose main component is a metal having a specific resistance of 4 muOmega.cm to 200 muOmega.cm is used as a nonmagnetic layer of a so-called CPP-GMR element. Therefore, even when an area of the element becomes limited, the element is not increased excessively in resistance. Thus, even when a magnetic gap is narrow, a large output can be obtained.