发明名称 |
N type impurity doping using implantation of P2+ ions or As2+ Ions |
摘要 |
A method for using ion implantation to implant phosphorous or arsenic impurities into shallow source/drain regions or into polysilicon electrodes used in devices having shallow source/drain electrodes. A phosphorous source having an abundance of P<SUB>2</SUB>+ ions is used in an ion beam system adjusted to select P<SUB>2</SUB>+ ions. Since each ion contains two phosphorous atoms the ion beam requires twice the beam energy and half the beam density. This provides good wafer throughput and improved source life. An arsenic source having an abundance of As<SUB>2</SUB>+ ions can be substituted for the solid phosphorous source resulting in a beam of As<SUB>2</SUB>+ ions.
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申请公布号 |
US6982215(B1) |
申请公布日期 |
2006.01.03 |
申请号 |
US19980186388 |
申请日期 |
1998.11.05 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
LEE BUAN HENG;LOW TECK HONG;WANG HAI RONG;YING TANG;LAM ZADIG CHERNG-CHING |
分类号 |
H01L21/425;H01L21/265;H01L21/28;H01L21/336 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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