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发明名称
利用原子层沉积填充元件间裂口之方法
摘要
一种填充一对形成于基材之上之元件间之裂口的方法。利用了原子层沉积法在一对元件间的沟渠或裂口中加入垫塞物,以部分地填充沟渠或缺口。最后沟渠或裂口会为总体填充程序所填充。
申请公布号
TW200601464
申请公布日期
2006.01.01
申请号
TW093134166
申请日期
2004.11.09
申请人
台湾积体电路制造股份有限公司
发明人
周友华;刘中伟;许光源;林志隆;蔡正原
分类号
H01L21/4757
主分类号
H01L21/4757
代理机构
代理人
蔡坤财
主权项
地址
新竹市新竹科学工业园区力行六路8号
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