| 摘要 |
<p>The invention relates to a method and an apparatus for measuring the thickness of the thin dielectric layers applied on conductive materials. According to the invention, the method is based on using capacitive means, namely a capacitor whose role is that of a transducer, for determining the thickness of the dielectric layer applied on the metallic support, whose film thickness shall be determined. According to the invention, the apparatus consists of two electric oscillators, one of which containing, in the oscillating circuit, a transducer-capacitor (Cs), which has an armature connected to the ground and whose role is played by the film metallic support the thickness of which shall be determined, so that the frequency obtained after composing the oscillations, may be used for indicating the dielectric layer thickness by means of a PC, knowing that the dynamics of the frequency resulting after composing the oscillations produced by the two oscillators, covers the input dynamics of a sound plate, thus there being allowed the apparatus calibration by means of a soft for processing, in real time or not, a file wherein the data were acquired.</p> |
