发明名称 |
PROCEDE DE RECUIT THERMIQUE RAPIDE DE TRANCHES A COURONNE |
摘要 |
The rapid heat treatment of a multi-layer crowned wafer (10), made of semiconductor materials, is characterized in that during the annealing the heating is locally and selectively adapted at the level of the crown in order to take account of the local difference in heat absorption An Independent claim is also included for a thermal continuity structure destined to be used in the heat treatment method, in which the dimensions of the structure are adapted to help establish on the wafer a crown temperature essentially equivalent to that of the rest of the wafer surface. |
申请公布号 |
FR2846787(B1) |
申请公布日期 |
2005.12.30 |
申请号 |
FR20030000286 |
申请日期 |
2003.01.13 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
NEYRET ERIC;MALLEVILLE CHRISTOPHE |
分类号 |
H01L21/00;H01L21/324;H01L21/762 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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