MULTI-GATE TRANSISTOR FABRICATION METHOD AND MULTI-GATE TRANSISTOR FABRICATED THEREBY,申请号KR20040049663-传众专利搜索

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发明名称	MULTI-GATE TRANSISTOR FABRICATION METHOD AND MULTI-GATE TRANSISTOR FABRICATED THEREBY
摘要
申请公布号	KR100541657(B1)	申请公布日期	2005.12.30
申请号	KR20040049663	申请日期	2004.06.29
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	KANG, TAE WOONG;AHN, JONG HYON
分类号	H01L21/336;H01L21/84;H01L27/12;H01L29/423;H01L29/786	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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