发明名称 |
Distributed high voltage JFET |
摘要 |
A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.
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申请公布号 |
US2005285157(A1) |
申请公布日期 |
2005.12.29 |
申请号 |
US20040874479 |
申请日期 |
2004.06.23 |
申请人 |
HOWER PHILIP L;WALCH DAVID A;LIN JOHN;MERCHANT STEVEN L |
发明人 |
HOWER PHILIP L.;WALCH DAVID A.;LIN JOHN;MERCHANT STEVEN L. |
分类号 |
H01L21/337;H01L29/10;H01L29/80;H01L29/808;(IPC1-7):H01L29/80 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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