发明名称 |
Plasma etching methods and contact opening forming methods |
摘要 |
The invention includes etching and contact opening forming methods. In one implementation, a plasma etching method includes providing a bottom powered plasma chamber that includes a plasma generating electrode powerable at different first and second frequencies, with the first frequency being lower than the second frequency. A substrate is positioned over the electrode. A plasma is generated over the substrate with the electrode from a first applied power at the first frequency and a second applied power at the second frequency. A ratio of the first applied power to the second applied power is from 0 to 0.25 or at least 6.0. Material is etched from the substrate with the plasma.
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申请公布号 |
US2005284843(A1) |
申请公布日期 |
2005.12.29 |
申请号 |
US20040875330 |
申请日期 |
2004.06.23 |
申请人 |
HOWARD BRADLEY J;HINEMAN MAX F |
发明人 |
HOWARD BRADLEY J.;HINEMAN MAX F. |
分类号 |
H01L21/302;H01L21/311;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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