| 发明名称 |
H2O plasma for simultaneous resist removal and charge releasing |
| 摘要 |
An in-situ method of stripping a layer of resist from a substrate or wafer utilizes pure H<SUB>2</SUB>O plasma recipe to substantially prevent charges from accumulating on the substrate or wafer during stripping of the layer of resist.
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| 申请公布号 |
US2005287814(A1) |
申请公布日期 |
2005.12.29 |
| 申请号 |
US20050140115 |
申请日期 |
2005.05.27 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LEE YUAN-BANG;WU TZU-YANG;PAN SHEUG-LIANG;LIN U. H.;LAI YU-CHIH;CHEN DE-FANG |
| 分类号 |
G03F7/42;H01L21/00;H01L21/26;H01L21/302;H01L21/311;H01L21/324;H01L21/42;H01L21/461;H01L21/477;(IPC1-7):H01L21/00 |
主分类号 |
G03F7/42 |
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