NANOWIRE SEMICONDUCTOR DEVICE

摘要

Semiconductor devices are fabricated using nanowires (16). A conductive gate (22) may be used to control conduction along the nanowires (16), in which case one of the contacts is a drain (12) and the other a source (18). The nanowires (16) may be grown in a trench or through-hole (8) in a substrate (2) or in particular in epilayer (3) on substrate (2). The gate (22) may be provided only at one end of the nanowires (16). The nanowires (16) can be of the same material along their length; alternatively different materials can be used, especially different materials adjacent to the gate (22) and between the gate (22) and the base of the trench.