Multi-stage semiconductor manufacturing process uses a combination of wet and dry chemical etching processes

摘要

In a semiconductor manufacturing process, an inner electrical circuit is connected to a strip conductor structure and/or external metal-coated contact surface on a substrate (10) with first (1) and second (2) metal-coated layers. In the first stage, the metal coating (1) is applied to the substrate in sections, followed by application in stages of a mask layer (21) to the coating (1). The mask layer is modified to form a structure, followed by application using a wet chemical etching process of a second metallic layer (2) to the first (1) and structured mask (21). The second metallic layer is then removed in sections from the second mask layer (21). The first layer (1) is then modified by a dry chemical etching process to form a structure using the structured first mask layer (21).