发明名称 THIN FILM TRANSISTOR SUBSTRATE OF HORIZONTAL ELECTRONIC FIELD APPLYING TYPE AND FABRICATING METHOD THEREOF
摘要 <p>A horizontal electric field applying type thin film transistor substrate of a LCD device having an increased aperture ratio as well as a simplified manufacturing process. The device includes a gate line having a double layered structure including a transparent first conductive layer and an opaque second conductive layer, a data line crossing the gate line to define a pixel area; a thin film transistor connected to the gate line and the data line; a common line having first and second conductive layers and substantially parallel to the gate line; a common electrode extended from the first conductive layer of the common line in the pixel area; and a pixel electrode connected to the thin film transistor to form a horizontal electric field with the common electrode in the pixel area.</p>
申请公布号 KR20050122465(A) 申请公布日期 2005.12.29
申请号 KR20040047574 申请日期 2004.06.24
申请人 LG.PHILIPS LCD CO., LTD. 发明人 AHN, BYUNG CHUL
分类号 H01L29/786;H01L21/77;H01L27/12;H01L27/13;(IPC1-7):H01L29/786 主分类号 H01L29/786
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