| 发明名称 |
Persistent p-type group II-VI semiconductors |
| 摘要 |
A persistent p-type group II-VI semiconductor material is disclosed containing atoms of group II elements, atoms of group VI elements, and a p-type dopant which replaces atoms of the group VI element in the semiconductor material. The p-type dopant has a negative oxidation state. The p-type dopant causes formation of vacancies of atoms of the group II element in the semiconductor material. Fabrication methods and solid state devices containing the group II-VI semiconductor material are disclosed.
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| 申请公布号 |
US2005285138(A1) |
申请公布日期 |
2005.12.29 |
| 申请号 |
US20050165848 |
申请日期 |
2005.06.17 |
| 申请人 |
BURGENER ROBERT H II;FELIX ROGER L;RENLUND GARY M |
发明人 |
BURGENER ROBERT H.II;FELIX ROGER L.;RENLUND GARY M. |
| 分类号 |
C01G9/02;H01L21/00;H01L21/28;H01L21/31;H01L21/3115;H01L21/316;H01L21/363;H01L21/365;H01L21/469;H01L23/58;H01L27/15;H01L29/225;H01L29/26;H01L31/0296;H01L31/0328;H01L31/12;H01L33/28;H01S5/30;H01S5/327;H01S5/347;(IPC1-7):H01L31/032 |
主分类号 |
C01G9/02 |
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