发明名称 Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element
摘要 Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.
申请公布号 US2005285132(A1) 申请公布日期 2005.12.29
申请号 US20050117406 申请日期 2005.04.29
申请人 发明人 ORITA KENJI
分类号 H01L33/32;G02B6/122;H01L29/22;H01L33/40;H01L33/54;H01L33/56;H01L33/62;(IPC1-7):H01L29/22 主分类号 H01L33/32
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