发明名称 |
Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
摘要 |
Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.
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申请公布号 |
US2005285132(A1) |
申请公布日期 |
2005.12.29 |
申请号 |
US20050117406 |
申请日期 |
2005.04.29 |
申请人 |
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发明人 |
ORITA KENJI |
分类号 |
H01L33/32;G02B6/122;H01L29/22;H01L33/40;H01L33/54;H01L33/56;H01L33/62;(IPC1-7):H01L29/22 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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