发明名称 Semiconductor device improving error correction processing rate
摘要 In an exclusive OR circuit (XOR gate) constituting an ECC circuit, the drivability of P channel MOS transistors is set larger than the drivability of N channel MOS transistors. Accordingly, the speed of the logic level of an output node being set to an H level from an L level identified as a reset state is increased than the case where the drivability is set equal. Thus, the time required to output a syndrome from a plurality of stages of XOR gates can be reduced to allow execution of error correction processing at high speed.
申请公布号 US2005289441(A1) 申请公布日期 2005.12.29
申请号 US20050148365 申请日期 2005.06.09
申请人 RENESAS TECHNOLOGY CORP. 发明人 KAWAGOE TOMOYA;OOISHI TSUKASA
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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