发明名称 |
Organic TFT and method of fabricating the same |
摘要 |
The present invention provides an organic thin film transistor and method for fabricating the same. The organic thin film transistor has a substrate and a gate electrode that is positioned on the substrate. A gate insulator has a stacked structure comprising an inorganic gate insulator and an organic gate insulator that are positioned on the gate electrode. An organic semiconductor layer is positioned on the gate insulator to overlap the gate electrode. Accordingly, an organic thin film transistor that has flexibility, decreased leakage current, and a low threshold is formed.
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申请公布号 |
US2005285102(A1) |
申请公布日期 |
2005.12.29 |
申请号 |
US20050158049 |
申请日期 |
2005.06.22 |
申请人 |
KOO JAE-BON;SUH MIN-CHUL;MO YEON-GON |
发明人 |
KOO JAE-BON;SUH MIN-CHUL;MO YEON-GON |
分类号 |
H01L21/786;H01L21/00;H01L29/08;H01L51/05;(IPC1-7):H01L29/08 |
主分类号 |
H01L21/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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