| 发明名称 |
Facilitating removal of sacrificial layers to form replacement metal gates |
| 摘要 |
In a metal gate replacement process, a gate electrode stack may be formed of a germanium containing layer. In subsequent processing of the source/drains, high temperature steps may be utilized, forming a germinide on said stacks. That germinide may be removed, prior to removing the rest of the stack, using H<SUB>2</SUB>O<SUB>2</SUB>.
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| 申请公布号 |
US2005287746(A1) |
申请公布日期 |
2005.12.29 |
| 申请号 |
US20040877232 |
申请日期 |
2004.06.24 |
| 申请人 |
METZ MATTHEW V;DATTA SUMAN;KAVALIEROS JACK;DOCZY MARK L;BRASK JUSTIN K;CHAU ROBERT S |
发明人 |
METZ MATTHEW V.;DATTA SUMAN;KAVALIEROS JACK;DOCZY MARK L.;BRASK JUSTIN K.;CHAU ROBERT S. |
| 分类号 |
H01L21/336;H01L21/8238;H01L29/49;H01L29/51;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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