HYBRID SUBSTRATE TECHNOLOGY FOR HIGH-MOBILITY PLANAR AND MULTIPLE-GATE MOSFETS
摘要
A hybrid substrate having a high-mobility surface for use with planar and/or multiple-gate metal oxide semiconductor field effect transistors (MOSFETs) is provided. The hybrid substrate has a first surface portion that is optimal for n-type devices, and a second surface portion that is optimal for p-type devices. Due to proper surface and wafer flat orientations in each semiconductor layers of the hybrid substrate, all gates of the devices are oriented in the same direction and all channels are located on the high mobility surface. The present invention also provides for a method of fabricating the hybrid substrate as well as a method of integrating at least one planar or multiple-gate MOSFET thereon.
申请公布号
WO2005124871(A2)
申请公布日期
2005.12.29
申请号
WO2005US21674
申请日期
2005.06.20
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;DORIS, BRUCE, B.;IEONG, MEIKEI;NOWAK, EDWARD J.;YANG, MIN
发明人
DORIS, BRUCE, B.;IEONG, MEIKEI;NOWAK, EDWARD J.;YANG, MIN