发明名称 |
METHOD OF FABRICATING ALGAINP LIGHT-EMITTING DIODE AND STRUCTURE THEREOF |
摘要 |
A soft transparent adhesive layer is utilized to bond a transparent substrate material onto an AlGaInP light-emitting diode epitaxy on a GaAs substrate, and the GaAs substrate is next removed entirely. Then, a mesa etching process is performed to form a first top surface and a second top surface on the AlGaInP light-emitting diode epitaxy for respectively exposing an n-type layer and a p-type layer in the AlGaInP light-emitting diode epitaxy. Next, a metal reflective layer and a barrier layer are formed on the AlGaInP light-emitting diode epitaxy in turn, and electrodes are finally fabricated on the barrier layer.
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申请公布号 |
US2005287687(A1) |
申请公布日期 |
2005.12.29 |
申请号 |
US20040917950 |
申请日期 |
2004.08.13 |
申请人 |
LIAO TIEN-FU;CHANG CHIH-SUNG;CHEN TZER-PERNG |
发明人 |
LIAO TIEN-FU;CHANG CHIH-SUNG;CHEN TZER-PERNG |
分类号 |
H01L21/00;H01L33/00;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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