发明名称 |
Temperature adaptive ferro-electric memory access parameters |
摘要 |
Briefly, one or more memory access parameters used to access a memory cell are adjusted based on a sensed operating temperature. In one embodiment, a pulse width of an access voltage is increased as the operating temperature decreases below a threshold. In another embodiment, a drive voltage is decreased as the operating temperature increases.
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申请公布号 |
US2005288902(A1) |
申请公布日期 |
2005.12.29 |
申请号 |
US20040877914 |
申请日期 |
2004.06.25 |
申请人 |
COULSON RICHARD L;LUEKER JONATHAN C |
发明人 |
COULSON RICHARD L.;LUEKER JONATHAN C. |
分类号 |
G06F11/30;(IPC1-7):G06F11/30 |
主分类号 |
G06F11/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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