发明名称 |
LED fabrication via ion implant isolation |
摘要 |
A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.
|
申请公布号 |
US2005285126(A1) |
申请公布日期 |
2005.12.29 |
申请号 |
US20050154619 |
申请日期 |
2005.06.16 |
申请人 |
WU YIFENG;NEGLEY GERALD H;SLATER DAVID B JR;TSVETKOV VALERI F;SUVOROV ALEXANDER |
发明人 |
WU YIFENG;NEGLEY GERALD H.;SLATER DAVID B.JR.;TSVETKOV VALERI F.;SUVOROV ALEXANDER |
分类号 |
H01L29/22;H01L33/30;H01L33/32;(IPC1-7):H01L29/22 |
主分类号 |
H01L29/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|