| 摘要 |
The present invention provides a gate dielectric having a flat nitrogen profile, a method of manufacture therefor, and a method of manufacturing an integrated circuit including the flat nitrogen profile. In one embodiment, the method of manufacturing the gate dielectric includes forming a gate dielectric layer ( 410 ) on a substrate ( 310 ), and subjecting the gate dielectric layer ( 410 ) to a nitrogen containing plasma process ( 510 ), wherein the nitrogen containing plasma process ( 510 ) has a ratio of helium to nitrogen of 3:1 or greater.
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