METHOD OF FORMING A SEMICONDUCTOR LAYER USING A PHOTOMASK RETICLE HAVING MULTIPLE VERSIONS OF THE SAME MASK PATTERN WITH DIFFERENT BIASES
摘要
A method of forming a semiconductor layer of a semiconductor device including interposing a reticle between an energy source and a semiconductor wafer, the reticle including at least two duplicate mask patterns each having a different bias, and passing energy through an opening in a shutter and through one of the at least two duplicate mask patterns using the energy source to form an image on the semiconductor wafer. The one of the at least two duplicate mask patterns is chosen based on a required bias. The at least two duplicate mask patterns are disposed in a side by side relationship to one another and extend parallel or transverse to the shutter opening.
申请公布号
WO2005124293(A1)
申请公布日期
2005.12.29
申请号
WO2005US20424
申请日期
2005.06.09
申请人
PHOTRONICS, INC.;ROCKWELL, BARRY, K.;TRACY, JEFFREY, W.;VOKOUN, EDWARD
发明人
ROCKWELL, BARRY, K.;TRACY, JEFFREY, W.;VOKOUN, EDWARD