首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
METHOD FOR FORMING TRANSISTOR IN CMOS SEMICONDUCTOR DEVICE
摘要
申请公布号
KR20050122652(A)
申请公布日期
2005.12.29
申请号
KR20040048257
申请日期
2004.06.25
申请人
HYNIX SEMICONDUCTOR INC.
发明人
CHAE, KWANG KEE
分类号
H01L21/265;H01L21/306;H01L21/8238;(IPC1-7):H01L21/823
主分类号
H01L21/265
代理机构
代理人
主权项
地址
您可能感兴趣的专利
Massager
Printing apparatus having erasing mechanism
Glazing bead assembly
Descaling composition
Apparatus and method for use in the manufacture of a lower limb prosthesis
Electrostatic Relay
Improvements in and relating to velocity change sensors
PROCEDIMENTO PER LA LEVIGATURA DELLO SPIGOLO DI FETTE DI SEMICONDUTTORI.
POWER CONTROL APPARATUS
PROCESS FOR THE PRODUCTION OF CHLOROTHALONYL
TRANSMISSION APPARATUS
DYNAMIC FOCUS COMPENSATING CIRCUIT FOR MULTI SINK MONITOR
AUTOMATIC CUTTING DEVICE OF RECORDING PAPER FOR FAX
MASTER CLOCK CIRCUIT
HEAT EXCHANGER PIPES USING HOT REGENERATOR
HEAT EXCHANGER OF GAS BOILER
OVERLOAD PROTECTING CIRCUIT OF VERTICAL DEFLETION DEVICE
VCR COMPENSATER OF DEFLECTION YOKE
