| 摘要 |
A connective structure is formed by first depositing an insulator over a planarized surface. A trench is etched in the insulator. A barrier layer is deposited on the insulator. A seed layer is deposited on the barrier layer. The barrier layer and seed layer are selectively removed from areas of the insulator leaving an exposed seed area. A conductor is deposited on the exposed seed area. As many of these connective structures as desired may be stacked in an integrated circuit structure.
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