发明名称 |
Laser anneal method of a semiconductor layer |
摘要 |
For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.
|
申请公布号 |
US2005287825(A1) |
申请公布日期 |
2005.12.29 |
申请号 |
US20050207458 |
申请日期 |
2005.08.18 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
OGATA HIDENORI;WAKITA KEN;YONEDA KIYOSHI;MORIMOTO YOSHIHIRO;YAMADA TSUTOMU;IMAO KAZUHIRO;KUWAHARA TAKASHI |
分类号 |
G02F1/136;G02F1/1368;H01L21/20;H01L21/26;H01L21/268;H01L21/3205;H01L21/324;H01L21/336;H01L21/42;H01L21/4763;H01L21/477;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
G02F1/136 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|